An extended Stoney's formula including nonlinear deformation for large size wafer of multilayers with arbitrary thicknesses.Scripta Materialia,186,29-32,2020 Critical thickness of GaN film in controllable stress-induced self separation for preparing native GaN substrates.Materials and Design,180,107985-,2019 Anisotropic dependence of light extraction behavior on propagation path in AlGaN-based deep-ultraviolet light-emitting diodes.Optics Express,27,A436-A444,2019 Coordinated stress management and dislocation control in GaN growth on Si (111) substrates by using a carbon nanotube mask.Nanoscale,11,4489-4495,2019 Grouped and Multistep Nanoheteroepitaxy: Toward High-Quality GaN on Quasi-Periodic Nano-Mask.ACS Appl. Mater. Interface,8,18208,2016 Angular distribution of polarized light and its effect on light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes.OPTICS EXPRESS,24,A935,2016 Temperature-dependent polarization characteristics in Al0.25Ga0.75N/AlN/GaN heterostructure.Applied Physics Letters,108,63053,2016 Enhancement of surface emission in deep-UV AlGaN-based LEDs with step-shaped quantum wells.Optics Letters37, 3693 (2012) Modulating lateral strain in GaN-based epitaxial layers by patterning sapphire substrates with aligned carbon nanotube films.Nano Res. 5，646 （2012） Polarization of edge emission from III-Nitride light emitting diodes of emission wavelength from 395nm-455nm.Applied Physics Letters 90，211112（2007）