Xinqiang Wang, Bo Shen, Zhixin Qin, Fujun Xu , Xueling Yang, Bowen Sheng, Xin Rong, Tao Wang, Shibo Wang, Ping Wang, Hongwei Liang, Lei Guo and Xiantong Zheng.Photoconductivity in InxGa1-xN epilayers.OPTICAL MATERIALS EXPRESS,2016,10.1364/OME.6.000815 Bo Shen, Xuelin Yang, Xinqiang Wang, Zhixin Qin, Ning Tang, Fujun Xu, Maojun Wang, Weikun Ge, Jie Zhang, Lei Guo, Jianpeng Cheng and Anqi Hu.Spatial identification of traps in AlGaN/GaN heterostructures by the combinationof lateral and vertical electrical stress measurements.Applied Physics Letters,2016,10.1063/1.4941027 Yonghai Chen, Xinqiang Wang, Yixin Wang, Qing Wu, Yuan Li, Xiantong Zheng, Laipan Zhu, 刘瑜 and Wei Huang.Reflectance difference spectroscopy microscope for circular defects on InN films.Optics Express,2016,10.1364/OE.24.015059 Ping Wang, and Bo Shen, Xixiang Zhang, Xinqiang Wang, Xinzheng Li, Zhixin Qin, Fujun Xu, Xuelin Yang, Lifeng Bian, Yongqiang Zhang, Qingxiao Wang, Bowen Sheng, Tao Wang, Xin Rong, Xiantong Zheng, Xinqiang Wang, Chao Zhao, Ying Yuan, Ping Wang and Ping Wang.Lattice-Polarity-Driven Epitaxy of Hexagonal Semiconductor Nanowires.Nano Letters,2015,10.1021/acs.nanolett.5b04726 Bo Shen, Zhixin Qin, Xinqiang Wang, Fujun Xu, Lise Wei, Chenguang He and Mengjun Hou.Study on AlGaN P-I-N-I-N solar-blind avalanche photodiodes with Al0.45Ga0.55N multiplication layer.Electronic Materials Letters volume,2015,10.1007/s13391-015-5142-6 B. Shen, X. Q. Wang, B. Shen, W. K. Ge, M. Sumiya, L. W. Sang, Y. H. Chen, N. Tang, Z. X. Qin, F. J. Xu, P. Wang, X. T. Zheng, G. Chen and X. Rong.Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells.Scientific Reports,2015,10.1038/srep14386 Bo Shen, Weikun Ge, Xinqiang Wang, Lisheng Zhang, Shan Zhang, Mengjun Hou, Fujun Xu, Zhixin Qin and Chenguang He.Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers.Scientific Reports,2015,10.1038/srep13046 Xinqiang Wang, Bo Shen, Weikun Ge, Ning Tang, Fujun Xu, Maojun Wang, Tongjun Yu, Yong Xiang, Anqi Hu, Lei Guo, Zhi He, Lifang Jia, Jianpeng Cheng, Xuelin Yang and Ling Sang.Hysteresis phenomena of the two dimensional electron gas density in latticematched InAlN/GaN heterostructures.Applied Physics Letters,2015,10.1063/1.4928449 Xin Qiang Wang, Akihiko Yoshikawa, Yutaka Ohno, Yuki Tokumoto, Kentaro Kutsukake, Momoko Deura, Yasushi Ohkubo and Ichiro Yonenaga.Elastic properties of indium nitrides grown on sapphire substrates determined by nano-indentation: In comparison with other nitrides.AIP Advances,2015,10.1063/1.4926966 B. Shen, F. J. Xu, X. Q. Wang, N. Tang, X. L. Yang, Z. X. Qin, J. P. Cheng, J. Huang, L. S. Zhang, C. G. He, J. M. Wang and X. Zhang.Epitaxial growth of AlN films on sapphire via a multilayer structure adopting a low- and hightemperature alternation technique.CrystEngComm,2015,10.1039/c5ce01159k