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Main positions:博士生导师
Degree:Doctoral degree
Status:Employed
School/Department:凝聚态物理与材料物理研究所

史俊杰

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Gender: Male

Education Level: Postgraduate (Doctoral)

Administrative Position: 教授

Alma Mater: 澳大利亚Macquarie大学

Paper Publications

2D Ca3Sn2S7 Chalcogenide Perovskite: A Graphene-Like Semiconductor with Direct Bandgap 0.5 eV and Ultrahigh Carrier Mobility 6.7×104 cm2V-1s-1
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Impact Factor:25.809
Journal:Adv. Mater.
Key Words:Ca3Sn2S7 monolayers, direct bandgap semiconductors, graphene-like linear electronic dispersion, strong optical absorption, ultrahigh carrier mobility
Abstract:Graphene, a star 2D material, has attracted much attention because of its unique properties including linear electronic dispersion, massless carriers, and ultrahigh carrier mobility (104–105 cm2 V−1 s−1). However, its zero bandgap greatly impedes its application in the semiconductor industry. Opening the zero bandgap has become an unresolved worldwide problem.
Here, a novel and stable 2D Ruddlesden–Popper-type layered chalcogenide perovskite semiconductor Ca3Sn2S7 is found based on first-principles GW calculations, which exhibits excellent electronic, optical, and transport properties, as well as soft and isotropic mechanical characteristics. Surprisingly, it has a graphene-like linear electronic dispersion, small carrier effective mass (0.04 m0), ultrahigh room-temperature carrier mobility (6.7 × 104 cm2 V−1 s−1), Fermi velocity (3 × 105 m s−1), and optical absorption coefficient (105 cm−1). Particularly, it has a direct quasi-particle bandgap of 0.5 eV, which realizes the dream of opening the graphene bandgap in a new way. These results guarantee its application in infrared optoelectronic and high-speed electronic devices.
Indexed by:Journal paper
Discipline:Natural Science
First-Level Discipline:Physics
Volume:31
Page Number:1905643
Translation or Not:no
Included Journals:SCI
Date of Publication:2019-11-04