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Main positions:博士生导师
Degree:Doctoral degree
Status:Employed
School/Department:凝聚态物理与材料物理研究所

Peking University Official Website Pkunews

中文

史俊杰

Gender: Male

Education Level: Postgraduate (Doctoral)

Administrative Position: 教授

Alma Mater: 澳大利亚Macquarie大学

Paper Publications

Current position: Home / Scientific Research / Paper Publications

[1] Design of Lead-Free and Stable Two-Dimensional Dion−Jacobson-Type Chalcogenide Perovskite A'La2B3S10 (A'=Ba/Sr/Ca; B=Hf/Zr) with Optimal Band Gap, Strong Optical Absorption, and High Efficiency for Photovoltaics, Chem. Mater., 32, 2450-2460, 2020.
[2] Two-Dimensional 111-Type In-Based Halide Perovskite Cs3In2X9 (X=Cl, Br, I) with Optimal Band Gap for Photovoltaics and Defect-Insensitive Blue Emission, Phys. Rev. Applied, 13, 024031, 2020.
[3] 2D Ca3Sn2S7 Chalcogenide Perovskite: A Graphene-Like Semiconductor with Direct Bandgap 0.5 eV and Ultrahigh Carrier Mobility 6.7×104 cm2V-1s-1, Adv. Mater., 31, 1905643, 2019.
[4] Optimized band gap and fast interlayer charge transfer in two-dimensional perovskite oxynitride Ba2NbO3N and Sr2NbO3N/Ba2NbO3N bonded heterostructure visible-light photocatalysts for overall water splitting, Journal of Colloid and Interface Science, 546, 20-31, 2019.
[5] Promising photovoltaic and solid-state-lighting materials: two-dimensional Ruddlesden-Popper type lead-free halide double perovskites Csn+1Inn/2Sbn/2I3n+1 (n=3) and Csn+1Inn/2Sbn/2Cl3n+1/Csm+1Cum/2Bim/2Cl3m+1 (n=3, m=1), J. Mater. Chem. C, 6, 11575-11586, 2018.
[6] Anomalous Pressure Characteristics of Defects in Hexagonal Boron Nitride Flakes, ACS Nano, 12, 7127−7133, 2018.
[7] Enhancement of photoluminescence and hole mobility in 1- to 5-layer InSe due to the top valence-band inversion: strain effect, Nanoscale, 10, 11441-11451, 2018.
[8] Modulation of electronic and magnetic properties in InSe nanoribbons: edge effect, Nanotechnology, 29, 205708, 2018.
[9] Two-dimensional n-InSe/p-GeSe(SnS) van der Waals heterojunctions: High carrier mobility and broadband performance, Phys. Rev. B, 97, 15416, 2018.
[10] Enhancement of hole mobility in InSe monolayer via InSe and black phosphorus heterostructure, Nanoscale, 9, 14682–14689, 2017.

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Paper Publications