Publications
Y. Wu, Y. Xiao, I. Navid, K. Sun, Y. Malhotra, P. Wang, D. Wang, Y. Xu, A. Pandey, M. Reddeppa, W. Shin, J. Liu, J. Min, and Z. Mi,* InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering, Light: Science & Applications 2022, 11, 294. DOI: 10.1038/s41377-022-00985-4
S. Mondal, D. Wang,* P. Wang, Y. Wu, M. Hu, Y. Xiao, S. Mohanty, T. Ma, E. Ahmadi, and Z. Mi,* Reconfgurable self-powered deep UV photodetectors based on ultrawide bandgap ferroelectric ScAlN, APL Materials 2022, 10, 121101. DOI: 10.1063/5.0122943
D. Wang, P. Wang,* S. Mondal, S. Mohanty, T. Ma, E. Ahmadi, and Z. Mi,* An Epitaxial Ferroelectric ScAlN/GaN Heterostructure Memory, Advanced Electronic Materials 2022, 8, 2200005. DOI: 10.1002/aelm.202200005
S. Sheng, T. Wang,* S. Liu, F. Liu, B. Sheng, Y. Yuan, D. Li, Z. Chen, R. Tao, L. Chen, B. Zhang, J. Yang, P. Wang, D. Wang, X. Sun, J. Zhang, J. Xu, W. Ge, B. Shen, and X. Wang,* Atomic-Scale Investigation of the Lattice-Asymmetry-Driven Anisotropic Sublimation in GaN, Advanced Science 2022, 9, 2106028. DOI: 10.1002/advs.202106028
J. Li, B. Sheng, Y. Chen, S. M. Sadaf, J.Yang, P. Wang, H. Pan, T. Ma, L. Zhu, J. Song,* H. Lin, X. Wang,* Z. Huang,* and B. Zhou,* Oxynitride-surface engineering of rhodium-decorated gallium nitride for efficient thermocatalytic hydrogenation of carbon dioxide to carbon monoxide, Communications Chemistry 2022, 5, 107. DOI: 10.1038/s42004-022-00728-x
P. Zhou, I. Ahmed Navid, Y. Xiao, Z. Ye, W. J. Dong, P. Wang, K. Sun, and Ze. Mi,* Metal-Support Interaction-Promoted Photothermal Catalytic Methane Reforming into Liquid Fuels, Journal of Physical Chemistry Letters 2022, 13, 8122−8129. DOI: 10.1021/acs.jpclett.2c01459
D. Wang, P. Wang,* S. Mondal, Y. Xiao, M. Hu, and Z. Mi,* Impact of dislocation density on the ferroelectric properties of ScAlN grown by molecular beam epitaxy, Applied Physics Express 2022, 121, 042108. DOI: 10.1063/5.0099913
A. Khandelwal, Z. Ren, S. Namiki, Z. Yang, N. Choudhary, C. Li, P. Wang, Z. Mi, and X. Li,* Self-Rolled-Up Aluminum Nitride-Based 3D Architectures Enabled by Record-High Differential Stress, ACS Applied Materials and Interfaces 2022, 14, 29014−29024. DOI: 10.1021/acsami.2c06637
P. Wang, D. Wang,* S. Mondal, and Z. Mi,* Ferroelectric N-polar ScAlN/GaN heterostructures grown by molecular beam epitaxy, Applied Physics Letters 2022, 121, 023501. DOI: 10.1063/5.0097117
P. Wang, W. Lee, J. P. Corbett, W. H. Koll, N. M. Vu, D. A. Laleyan, Q. Wen, Y. Wu, A. Pandey, J. Gim, D. Wang, D. Y. Qiu, R. Hovden, M. Kira, J. T. Heron, J. A. Gupta,* E. Kioupakis,* and Z. Mi,* Scalable Synthesis of Monolayer Hexagonal Boron Nitride on Graphene with Giant Bandgap Renormalization, Advanced Materials 2022, 34, 2201387. DOI: 10.1002/adma.202201387
A. Pandey, Y. Malhotra, P. Wang, K. Sun, X. Liu, and Z. Mi,* N-polar InGaN/GaN nanowires: overcoming the efficiency cliff of red-emitting micro-LEDs, Photonics Research 2022, 10, 1107-1116. DOI: 10.1364/PRJ.450465
P. Wang, D. Wang, S. Mondal, Y. Wu, T. Ma, and Z. Mi,* Interfacial Modulated Lattice-Polarity-Controlled Epitaxy of III-Nitride Heterostructures on Si(111), ACS Applied Materials and Interfaces 2022, 14, 15747−15755. DOI: 10.1021/acsami.1c23381
X. Liu, Y. Sun, Y. Malhotra, A. Pandey, P. Wang, Y. Wu, K. Sun, Z. Mi,* N-polar InGaN nanowires: breaking the efficiency bottleneck of nano and micro LEDs, Photonics Research 2022, 10, 587-593. DOI: 10.1364/PRJ.443165
L. Chen, S. Sheng, B. Sheng, T. Wang, L. Yang, B. Zhang, J. Yang, X. Zheng, Z. Chen, P. Wang, W. Ge, B. Shen, X. Wang,* High electron mobility in nearly-dislocation-free hexagonal InN, Applied Physics Express 2022, 15, 011004. DOI: 10.35848/1882-0786/ac4449
P. Wang, D. Wang, Y. Bi, B. Wang, J. Schwartz, R. Hovden, Z. Mi,* Quaternary alloy ScAlGaN: A promising strategy to improve the quality of ScAlN, Applied Physics Letters 2022, 120, 012104. DOI: 10.1063/5.0060608 (Editor’s Pick)
D. Wang, P. Wang, B. Wang, Z. Mi,* Fully epitaxial ferroelectric ScGaN grown on GaN by molecular beam epitaxy, Applied Physics Letters 2021, 119, 111902. DOI: 10.1063/5.0060021
Patents