Publications

1. D. Wang, S. Mondal, P. Kezer, M. Hu, J. Liu, Y. Wu, P. Zhou, T. Ma, P. Wang, D. Wang,* J. T. Heron, Z. Mi,* Band alignment and charge carrier transport properties of YAlN/III-nitride heterostructures, Applied Surface Science 2023, 637, 157893. DOI: 10.1016/j.apsusc.2023.157893
   

2. D. A. Laleyan, W. Lee, Y. Zhao, Y. Wu, P. Wang, J. Song,* E. Kioupakis,* and Z. Mi*, APL Materials 2023, 11, 051103. DOI: 10.1063/5.0142242

3. D. Wang, D. Wang,*, P. Zhou, M. Hu, J. Liu, S. Mondal, T. Ma, P. Wang,* Z. Mi,* On the surface oxidation and band alignment of ferroelectric Sc0.18Al0.82N/GaN heterostructures, Applied Surface Science 2023, 628, 157337. DOI: 10.1016/j.apsusc.2023.157337

4. Y. Wu, P. Wang, W. Lee, A. Aiello, P. Deotare, T. Norris, P. Bhattacharya, M. Kira,* E. Kioupakis,* and Z. Mi,* Perspectives and recent advances of twodimensional III-nitrides: Material synthesis and emerging device applications, Applied Physics Letters 2023, 122, 160501. DOI: 10.1063/5.0145931

5. D. Wang, P. Wang,* S. Mondal, M. Hu, Y. Wu, T. Ma, and Z. Mi*, Ultrathin Nitride Ferroic Memory with Large ON/OFF Ratios for Analog In-Memory Computing, Advanced Materials 2023, 35, 2210628. DOI: 10.1002/adma.202210628

6. P. Wang, D. Wang,* S. Mondal, M. Hu, Y. Wu, T. Ma, and Z. Mi*, Ferroelectric Nitride Heterostructures on CMOS Compatible Molybdenum for Synaptic Memristors, ACS Applied Materials & Interfaces 2023, 15, 18022−18031. DOI: 10.1021/acsami.2c22798

7. P. Wang,* D. Wang, S. Mondal, M. Hu, J. Liu, and Z. Mi,* Dawn of nitride ferroelectric semiconductors: from materials to devices, Semiconductor Science and Technology 2023, 38, 043002. DOI: 10.1088/1361-6641/acb80e (Review)

8. D. Wang, P. Wang,* M. He, J. Liu, S. Mondal, M. Hu, D. Wang, Y. Wu, T. Ma, and Z. Mi,* Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT Applied Physics Letters 2023, 122, 090601. DOI: 10.1063/5.0143645 (Featured)

9. D. Wang, P. Wang,* S. Mondal, M. Hu, D. Wang, Y. Wu, T. Ma, and Z. Mi,* Thickness scaling down to 5 nm of ferroelectric ScAlN on CMOS compatible molybdenum grown by molecular beam epitaxy, Applied Physics Letters 2023, 122, 052101. DOI: 10.1063/5.0136265 (Editor’s Pick)

10. P. Zhou, I. Ahmed Navid, Y. Ma, Y. Xiao, P. Wang, Z. Ye, B. Zhou, K. Sun, and Z. Mi,* Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting, Nature 2023, 613, 66-70. DOI: 10.1038/s41586-022-05399-1

11. W. J. Shin, P. Wang, Y. Sun, S. Paul, J. Liu, M. Kira, M. Soltani,* and Z. Mi,* Enhanced Pockels Effect in AlN Microring Resonator Modulators Based on AlGaN/AlN Multiple Quantum Wells, ACS Photonics 2023, 10, 34−42. DOI: 10.1021/acsphotonics.2c00370

Patents

Publications

1. Y. Wu, Y. Xiao, I. Navid, K. Sun, Y. Malhotra, P. Wang, D. Wang, Y. Xu, A. Pandey, M. Reddeppa, W. Shin, J. Liu, J. Min, and Z. Mi,* InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering, Light: Science & Applications 2022, 11, 294. DOI: 10.1038/s41377-022-00985-4 

2. S. Mondal, D. Wang,* P. Wang, Y. Wu, M. Hu, Y. Xiao, S. Mohanty, T. Ma, E. Ahmadi, and Z. Mi,* Reconfgurable self-powered deep UV photodetectors based on ultrawide bandgap ferroelectric ScAlN, APL Materials 2022, 10, 121101. DOI: 10.1063/5.0122943

3. D. Wang, P. Wang,* S. Mondal, S. Mohanty, T. Ma, E. Ahmadi, and Z. Mi,* An Epitaxial Ferroelectric ScAlN/GaN Heterostructure Memory, Advanced Electronic Materials 2022, 8, 2200005. DOI: 10.1002/aelm.202200005

4. S. Sheng, T. Wang,* S. Liu, F. Liu, B. Sheng, Y. Yuan, D. Li, Z. Chen, R. Tao, L. Chen, B. Zhang, J. Yang, P. Wang, D. Wang, X. Sun, J. Zhang, J. Xu, W. Ge, B. Shen, and X. Wang,* Atomic-Scale Investigation of the Lattice-Asymmetry-Driven Anisotropic Sublimation in GaN, Advanced Science 2022, 9, 2106028. DOI: 10.1002/advs.202106028

5. J. Li, B. Sheng, Y. Chen, S. M. Sadaf, J.Yang, P. Wang, H. Pan, T. Ma, L. Zhu, J. Song,* H. Lin, X. Wang,* Z. Huang,* and B. Zhou,* Oxynitride-surface engineering of rhodium-decorated gallium nitride for efficient thermocatalytic hydrogenation of carbon dioxide to carbon monoxide, Communications Chemistry 2022, 5, 107. DOI: 10.1038/s42004-022-00728-x

6. P. Zhou, I. Ahmed Navid, Y. Xiao, Z. Ye, W. J. Dong, P. Wang, K. Sun, and Ze. Mi,* Metal-Support Interaction-Promoted Photothermal Catalytic Methane Reforming into Liquid Fuels, Journal of Physical Chemistry Letters 2022, 13, 8122−8129. DOI: 10.1021/acs.jpclett.2c01459

7. D. Wang, P. Wang,* S. Mondal, Y. Xiao, M. Hu, and Z. Mi,* Impact of dislocation density on the ferroelectric properties of ScAlN grown by molecular beam epitaxy, Applied Physics Express 2022, 121, 042108. DOI: 10.1063/5.0099913

8. A. Khandelwal, Z. Ren, S. Namiki, Z. Yang, N. Choudhary, C. Li, P. Wang, Z. Mi, and X. Li,* Self-Rolled-Up Aluminum Nitride-Based 3D Architectures Enabled by Record-High Differential Stress, ACS Applied Materials and Interfaces 2022, 14, 29014−29024. DOI: 10.1021/acsami.2c06637

9. P. Wang, D. Wang,* S. Mondal, and Z. Mi,* Ferroelectric N-polar ScAlN/GaN heterostructures grown by molecular beam epitaxy, Applied Physics Letters 2022, 121, 023501. DOI: 10.1063/5.0097117

10. P. Wang, W. Lee, J. P. Corbett, W. H. Koll, N. M. Vu, D. A. Laleyan, Q. Wen, Y. Wu, A. Pandey, J. Gim, D. Wang, D. Y. Qiu, R. Hovden, M. Kira, J. T. Heron, J. A. Gupta,* E. Kioupakis,* and Z. Mi,* Scalable Synthesis of Monolayer Hexagonal Boron Nitride on Graphene with Giant Bandgap Renormalization, Advanced Materials 2022, 34, 2201387. DOI: 10.1002/adma.202201387

11. A. Pandey, Y. Malhotra, P. Wang, K. Sun, X. Liu, and Z. Mi,* N-polar InGaN/GaN nanowires: overcoming the efficiency cliff of red-emitting micro-LEDs, Photonics Research 2022, 10, 1107-1116. DOI: 10.1364/PRJ.450465

12. P. Wang, D. Wang, S. Mondal, Y. Wu, T. Ma, and Z. Mi,* Interfacial Modulated Lattice-Polarity-Controlled Epitaxy of III-Nitride Heterostructures on Si(111), ACS Applied Materials and Interfaces 2022, 14, 15747−15755. DOI: 10.1021/acsami.1c23381

13. X. Liu, Y. Sun, Y. Malhotra, A. Pandey, P. Wang, Y. Wu, K. Sun, Z. Mi,* N-polar InGaN nanowires: breaking the efficiency bottleneck of nano and micro LEDs, Photonics Research 2022, 10, 587-593. DOI: 10.1364/PRJ.443165

14. L. Chen, S. Sheng, B. Sheng, T. Wang, L. Yang, B. Zhang, J. Yang, X. Zheng, Z. Chen, P. Wang, W. Ge, B. Shen, X. Wang,* High electron mobility in nearly-dislocation-free hexagonal InN, Applied Physics Express 2022, 15, 011004. DOI: 10.35848/1882-0786/ac4449

15. P. Wang, D. Wang, Y. Bi, B. Wang, J. Schwartz, R. Hovden, Z. Mi,* Quaternary alloy ScAlGaN: A promising strategy to improve the quality of ScAlN, Applied Physics Letters 2022, 120, 012104. DOI: 10.1063/5.0060608 (Editor’s Pick)

16. D. Wang, P. Wang, B. Wang, Z. Mi,* Fully epitaxial ferroelectric ScGaN grown on GaN by molecular beam epitaxy, Applied Physics Letters 2021, 119, 111902. DOI: 10.1063/5.0060021

Patents

Publications

1. P. Wang, D. Wang, B. Wang, S. Mohanty, S. Diez, Y. Wu, Y. Sun, E. Ahmadi, Z. Mi,* N-polar ScAlN and HEMTs grown by molecular beam epitaxy, Applied Physics Letters 2021, 119, 082101. DOI: 10.1063/5.0055851 (Editor’s Pick)

2. P. Wang, D. Wang, N. M. Vu, T. Chiang, J. T. Heron, Z. Mi,* Fully epitaxial ferroelectric ScAlN grown by molecular beam epitaxy, Applied Physics Letters 2021, 118, 223504. DOI: 10.1063/5.0054539 (Featured)

3. P. Wang, B. Wang, D. A. Laleyan, A. Pandey, Y. Wu, Y. Sun, X. Liu, Z. Deng, E. Kioupakis, Z. Mi,* Oxygen defect dominated photoluminescence emission of ScxAl1−xN grown by molecular beam epitaxy, Applied Physics Letters 2021, 118, 032102. DOI: 10.1063/5.0035026

4. B Nikoobakht,* AC Johnston-Peck, D Laleyan, P Wang, Z Mi, Surface-directed ZnGa2O4 and β-Ga₂O₃ nanofins coated with a non-polar GaN shell based on the Kirkendall effect, CrystEngComm 2021, 23, 7955-7962. DOI: 10.1039/D1CE00744K

5. T. Wang, S. Liu, X. Zheng, P. Wang, D. Wang, Z. Chen, J. Wei, X. Rong, R. Tao, S. Guo, J. Zhang, J. Xu, X. Wang,* Microstructure and dislocation evolution in composition gradient AlGaN grown by MOCVD, Superlattices and Microstructures 2021, 152, 106842. DOI: 10.1016/j.spmi.2021.106842

6. Y Wu, P Wang, E Kioupakis, Z Mi,* Nanoscale AlGaN and BN: Molecular beam epitaxy, properties, and device applications, Semiconductors and Semimetals 107, 153-189, Elsevier, 2021. DOI: 10.1016/bs.semsem.2021.04.005 (Book Chapter)

7. D. Wang, Z. Chen, J. Su, T. Wang, B. Zhang, X. Rong, P. Wang, W. Tan, S. Guo, J. Zhang,* B. Shen, and X. Wang,* Controlling Phase-Coherent Electron Transport in III-Nitrides: Toward Room Temperature Negative Differential Resistance in AlGaN/GaN Double Barrier Structures, Advanced Functional Materials 2021, 31, 2007216. DOI: 10.1002/adfm.202007216

Patents

Publications

1. X. Zheng, T. Wang, P. Wang, X. Sun, D. Wang, Z. Chen, P. Quach, Y. Wang, X. Yang, F. Xu, Z. Qin, T. Yu, W. Ge, B. Shen, and X. Wang,* Full-composition-graded InxGa1-xN films grown by molecular beam epitaxy, Applied Physics Letters 2020, 117, 182101. DOI: 10.1063/5.0021811

2. B. Sheng, F. Bertram,* G. Schmidt, P. Veit, M. Muller, P. Wang, X. Sun, Z. Qin, B. Shen, X. Wang,* and J. Christen, Cathodoluminescence nano-characterization of individual GaN/AlN quantum disks embedded in nanowires, Applied Physics Letters 2020, 117, 133106. DOI: 10.1063/5.0024110

3. L. Yang, X. Wang,* T. Wang, J. Wang, W. Zhang, P. Quach, P. Wang, F. Liu, D. Li, L. Chen, S. Liu, J. Wei, X. Yang, F. Xu, N. Tang, W. Tan, J. Zhang, W. Ge, X. Wu, Chi Zhang,* and Bo Shen,* Three Subband Occupation of the Two-Dimensional Electron Gas in Ultrathin Barrier AlN/GaN Heterostructures, Advanced Functional Materials 2020, 30, 2004450. DOI: 10.1002/adfm.202004450

4. X. Sun, P. Wang, T. Wang, L. Chen, Z. Chen, K. Gao, T. Aoki, M. Li, J. Zhang, T. Schulz, M. Albrecht, W. Ge, Y. Arakawa, B. Shen, M. Holmes,* and X. Wang,* Single-photon emission from isolated monolayer islands of InGaN, Light: Science & Applications 2020, 9, 159. DOI: 10.1038/s41377-020-00393-6

5. Y. Wu, D. A. Laleyan, Z. Deng, C. Ahn, A. F. Aiello, A. Pandey, X. Liu, P. Wang, K. Sun, E. Ahmadi, Y. Sun, M. Kira, P. K. Bhattacharya, E. Kioupakis, and Z. Mi,* Controlling Defect Formation of Nanoscale AlN: Toward Efcient Current Conduction of Ultrawide-Bandgap Semiconductors, Advanced Electronic Materials 2020, 6, 2000337. DOI: 10.1002/aelm.202000337

6. X. Sun, P. Wang, Z. Chen, K. Gao, M. Li, J. Zhang, W. Ge, Y. Arakawa, B. Shen, X. Wang,* M. J. Holmes,* Excitation and emission dynamics of a single photon emitting InGaN quantum dot in a photonic horn structure, Superlattices and Microstructures 2020, 145, 106575. DOI: 10.1016/j.spmi.2020.106575

7. B. Sheng, G. Schmidt,* F. Bertram, P. Veit, Y. Wang, T. Wang, X. Rong, Z. Chen, P. Wang, J. Blasing, H. Miyake, H. Li, S. Guo, Z. Qin, A. Strittmatter, B. Shen, J. Christen, and X. Wang,* Photonics Research 2020, 8, 610-615. DOI: 10.1364/PRJ.384508

8. Q. Wen, Y. Wu, P. Wang, D. Laleyan, D. Bayerl, E. Kioupakis, Z. Mi, and M. Kira,* Hyperspectral absorption of semiconductor monolayer crystals, Applied Physics Letters 2020, 116, 181103. DOI: 10.1063/5.0004119

9. P. Wang, A. Pandey, J. Gim, W. J. Shin, E. T. Reid, D. A. Laleyan, Y. Sun, D. Zhang, Z. Liu, Z. Zhong, R. Hovden, and Z. Mi,* Graphene-assisted molecular beam epitaxy of AlN for AlGaN deep-ultraviolet light-emitting diodes, Applied Physics Letters 2020, 116, 171905. DOI: 10.1063/1.5144906

10. P. Wang, D. A. Laleyan, A. Pandey, Y. Sun, and Z. Mi,* Molecular beam epitaxy and characterization of wurtzite Sc_xAl_1−xN, Applied Physics Letters 2020, 116, 151903. DOI: 10.1063/5.0002445 (Editor’s Pick)

11. D. A. Laleyan, N. F. Delgado, E. T. Reid, P.Wang, A. Pandey, G. A. Botton, and Z. Mi,* Strain-free ultrathin AlN epilayers grown directly on sapphire by high-temperature molecular beam epitaxy, Applied Physics Letters 2020, 116, 152102. DOI: 10.1063/1.5144838

12. Y. Wu, X. Liu, P. Wang, D. A. Laleyan, K. Sun, Y. Sun, C. Ahn, M. Kira, E. Kioupakis, and Z. Mi,* Monolayer GaN excitonic deep ultraviolet light emitting diodes, Applied Physics Letters 2020, 116, 013101. DOI: 10.1063/1.5124828 (Featured)

Patents

Publications

1. A. Aiello, Y. Wu, A. Pandey, P. Wang, W. Lee, D. Bayerl, N. Sanders, Z. Deng, J. Gim, K. Sun, R. Hovden, E. Kioupakis, Z. Mi, and P. Bhattacharya,* Deep Ultraviolet Luminescence Due to Extreme Confinement in Monolayer GaN/Al(Ga)N Nanowire and Planar Heterostructures, Nano Letters 2019, 19, 7852-7858. DOI: 10.1021/acs.nanolett.9b02847

2. Y. Sun, W. Shin, D. A. Laleyan, P. Wang, A. Pandy, X. Liu, Y. Wu, M. Soltani, and Z. Mi,* Ultrahigh Q microring resonators using a single-crystal aluminum-nitride-on-sapphire platform, Optics Letters 2019, 44, 5679-5682. DOI: 10.1364/OL.44.005679

3. X. Fang, F. Zheng, O. Drachenko, S. Zhou, X. Zheng, Z. Chen, P. Wang, W. Ge, B. Shen, J. Feng, and X. Wang,* Determination of electron effective mass in InN by cyclotron resonance spectroscopy, Superlattices and Microstructures 2019, 136, 1-6. DOI: 10.1016/j.spmi.2019.106318

4. L. Yang, J. Wang, T. Wang, M. Wu, P. Wang, D. Wang, X. Yang, F. Xu, W. Ge, X. Wu, X. Wang*, and B. Shen, Planar anisotropic Shubnikov-de-Haas oscillations of two-dimensional electron gas in AlN/GaN heterostructure, Applied Physics Letters 2019, 115, 152107. DOI: 10.1063/1.5116747

5. P. Wang, T. Wang, H. Wang, X. Sun, P. Huang, B. Sheng, X. Rong, X. Zheng, Z. Chen, Y. Wang, D. Wang, H. Liu, F. Liu, L. Yang, D. Li, L. Chen, X. Yang, F. Xu, Z. Qin, J. Shi, T. Yu, W. Ge, B. Shen, and X. Wang,* Experimental Evidence of Large Bandgap Energy in Atomically Thin AlN, Advanced Functional Materials 2019, 29, 1902608. DOI: 10.1002/adfm.201902608

6. X. Sun, P. Wang, T. Wang, D. Li, Z. Chen, L. Chen, K. Gao, M. Li, J. Zhang, W. Ge, Y. Arakawa, B. Shen, M. Holmes, and X. Wang,* Single photon source based on an InGaN quantum dot in a site-controlled optical horn structure, Applied Physics Letters 2019, 115, 022101. DOI: 10.1063/1.5100323

7. X. Sun, P. Wang, B. Sheng, T. Wang, Z. Chen, K. Gao, M. Li, J. Zhang, W. Ge, Y. Arakawa, B. Shen, M. Holmes,* and X. Wang,* Single-photon emission from a further confined InGaN/GaN quantum disc via reverse-reaction growth, Quantum Engineering 2019, 2, e20. DOI: 10.1002/que2.2

8. B. Sheng, F. Bertram, X. Zheng, P. Wang, G. Schmidt, P. Veit, J. Bläsing, Z. Chen, A. Strittmatte, J. Christen, B. Shen, and X. Wang,* Intensive luminescence from a thick, indium-rich In0.7Ga0.3N film, Japanese Journal of Applied Physics 2019, 58, 065503. DOI: 10.7567/1347-4065/ab1a5b

9. Y. Wang, X. Rong, S. Ivanov, V. Jmerik, Z. Chen, H. Wang, T. Wang, P. Wang, P. Jin, Y. Chen, V. Kozlovsky, D. Sviridov, M. Zverev, E. Zhdanova, N. Gamov, V. Studenov, H. Miyake, H. Li, S. Guo, X. Yang, F. Xu, T. Yu, Z. Qin, W. Ge, B. Shen, and X. Wang,* Deep Ultraviolet Light Source from Ultrathin GaN/AlN MQW Structures with Output Power Over 2 Watt, Advanced Optical Materials 2019, 7, 1801763. DOI: 10.1002/adom.201801763

10. D. Wang, Z. Y. Chen, T. Wang, L. Y. Yang, B. W. Sheng, H. P. Liu, J. Su, P. Wang, X. Rong, J. Y. Cheng, X. Y. Shi, W. Tan, S. P. Guo, J. Zhang, W. K. Ge, B. Shen, and X. Q. Wang,* Repeatable asymmetric resonant tunneling in AlGaN/GaN double barrier structures grown on sapphire, Applied Physics Letters 2019, 114, 073503. DOI: 10.1063/1.5080470

11. J. Q. Wei, K. Kim, F. Liu, P. Wang, X. T. Zheng, Z. Y. Chen, D. Wang, A. Imran, X. Rong, X. L. Yang, F. J. Xu, J. Yang, B. Shen, and X. Q. Wang,* β-Ga₂O₃ thin film grown on sapphire substrate by plasmaassisted molecular beam epitaxy, Journal of Semiconductors 2019, 40, 012802. DOI: 10.1088/1674-4926/40/1/012802

Patents

Publications

1. D. Wang, J. Su, Z. Y. Chen, T. Wang, L. Y. Yang, B. W. Sheng, S. J. Lin, X. Rong, P. Wang, X. Y. Shi, W. Tan, J. Zhang, W. K. Ge, B. Shen, Y. N. Liu, and X. Q. Wang,* Repeatable Room Temperature Negative Differential Resistance in AlN/GaN Resonant Tunneling Diodes Grown on Sapphire, Advanced Electronic Materials 2018, 5, 1800651. DOI: 10.1002/aelm.201800651

2. X. T. Zheng, W. Huang, H. W. Liang, P. Wang, Y. Liu, Z. Y. Chen, P. Liang, M. Li, J. Zhang, Y. H. Chen, and X. Q. Wang,* Investigation of InGaN Layer Grown Under In-Rich Condition by Reflectance Difference Spectroscopy Microscope, Journal of Nanoscience and Nanotechnology 2018, 18, 7468–7472. DOI: 10.1166/jnn.2018.16086

3. S. B. Wang, X. Q. Wang,* Z. Y. Chen, P. Wang, Q. Qi, X. T. Zheng, B. W. Sheng, H. P. Liu, T. Wang, X. Rong, M. Li, J. Zhang, X. L. Yang, F. J. Xu, and B. Shen, Enhanced Hydrogen Detection Based on Mg-Doped InN Epilayer, Sensors 2018, 18, 2065. DOI: 10.3390/s18072065

4. Z. Y. Chen, J. Y. Sui, X. Q. Wang,* K. S. Kim, D. Wang, P. Wang, T. Wang, X. Rong, H. Harima, A. Yoshikawa, W. K. Ge, and B. Shen, Transition of dominant lattice sites of Mg in InN:Mg revealed by Raman scattering, Superlattices and Microstructures 2018, 120, 533-539. DOI: 10.1016/j.spmi.2018.06.026

5. T. Wang, X. Q. Wang,* Z. Y. Chen, X. X. Sun, P. Wang, X. T. Zheng, X. Rong, L. Y. Yang, W. W. Guo, D. Wang, J. P. Cheng, X. Lin, P. Li, J. Li, X. He, Q. Zhang, M. Li, J. Zhang, X. L. Yang, F. J. Xu, W. K. Ge, X. X. Zhang,* and B. Shen,* High-Mobility Two-Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy, Advanced Science 2018, 5, 1800844, 1-7. DOI: 10.1002/advs.201800844

6. S. L. Liu, B. W. Sheng, X. Q. Wang,* D. S. Dong, P. Wang, Z. Y. Chen, T. Wang, X. Rong, D. Li, L. Y. Yang, S. F. Liu, M. Li, J. Zhang, W. K. Ge, K. B. Shi, Y. Z. Tong, and B. Shen, Molecular beam epitaxy of single-crystalline aluminum film for low threshold ultraviolet plasmonic nanolasers, Applied Physics Letters 2018, 112, 231904. DOI:10.1063/1.5033941

7. H. P. Liu, X. Q. Wang,* Z. Y. Chen, X. T. Zheng, P. Wang, B. W. Sheng, T. Wang, X. Rong, M. Li, J. Zhang, X. L. Yang, F. J. Xu, W. K. Ge, and B. Shen, High-electron-mobility InN epilayers grown on silicon substrate, Applied Physics Letters 2018, 112, 162102. DOI: 10.1063/1.5017153

8. X. T. Zheng, H. W. Liang,* P. Wang, X. X. Sun, Z. Y. Chen, T. Wang, B. W. Sheng, Y. X. Wang, L. Chen, D. Wang, X. Rong, M. Li, J. Zhang, and X. Q. Wang,* Effect of indium droplets on growth of InGaN film by molecular beam epitaxy, Superlattices and Microstructures 2018, 113, 650-656. DOI: 10.1016/j.spmi.2017.11.053

9. X. X. Sun, X. Q. Wang,* S. T. Liu, P. Wang, D. Wang, X. T. Zheng, L. W. Sang, M. Sumiya, S. Ueda, M. Li, J. Zhang, W. K. Ge, and B. Shen, Determination of the transition point from electron accumulation to depletion at the surface of In_xGa_1-xN films, Applied Physics Express 2018, 11, 021001. DOI: 10.7567/APEX.11.021001

10. X. X. Sun, X. Q. Wang,* P. Wang, T. Wang, B. W. Sheng, X. T. Zheng, M. Li, J. Zhang, X. L. Yang, F. J. Xu, W. k. Ge, and B. Shen, Direct evidence of recombination between electrons in InGaN quantum discs and holes in p-type GaN, Optics Express 2017, 25, 30664. DOI: 10.1364/OE.25.030664

11. T.A. Komissarova,* P. Wang, P. Paturi, X. Wang, S.V. Ivanov, Influence of MBE growth modes and conditions on spontaneous formation of metallic In nanoparticles and electrical properties of InN matrix, Journal of Crystal Growth 2017, 478, 216-219.DOI: 10.1016/j.jcrysgro.2017.09.010 (https://doi.org/10.1016/j.jcrysgro.2017.09.010)

12. X. X. Sun, J. D. Wei, X. Q. Wang,* P. Wang, S. F. Li, A. Waag, M. Li, J. Zhang, W. k. Ge, and B. Shen, Anomalous surface potential behavior observed in InN by photoassisted Kelvin probe force microscopy, Applied Physics Letters 2017, 110, 222103. DOI: 10.1063/1.4984840 (https://doi.org/10.1063/1.4984840)

13. D. Y. Ma, X. Rong, X. T. Zheng, W. Y. Wang, P. Wang, T. Schulz, M. Albrecht, S. Metzner, M. Muller, O. August, F. Bertram, J. Christen, P. Jin, M. Li, J. Zhang, X. L. Yang, F. J. Xu, Z. X. Qin, W. K. Ge, B. Shen, and X. Q. Wang,* Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy, Scientific Reports 2017, 7, 46420. DOI: 10.1038/srep46420

14. P. Wang, X. Q. Wang,* T. Wang, C.-S. Tan, B. W. Sheng, X. X. Sun, M. Li, X. Rong, X. T. Zheng, Z. Y. Chen, X. L. Yang, F. J. Xu, Z. X. Qin, J. Zhang, X. X. Zhang,* and B. Shen,* Lattice-Symmetry-Driven Epitaxy of Hierarchical GaN Nanotripods, Advanced Functional Materials 2017, 27, 1604854. DOI: 10.1002/adfm.201604854

15. X. X. Sun, X. Q. Wang,* P. Wang, B. W. Sheng, M. Li, J. Su, J. Zhang, F. Liu, X. Rong, F. J. Xu, X. L. Yang, Z. X. Qin, W. K. Ge, and B. Shen, Identifying a doping type of semiconductor nanowires by photoassisted kelvin probe force microscopy as exemplified for GaN nanowires, Optical Materials Express 2017, 7, 904-912. DOI:10.1364/OME.7.000904

16. P. Huang, J. J. Shi,* P. Wang, M. Zhang, Y. M. Ding, M. Wu, J. Lu, and X. Q. Wang, Origin of the wide band gap from 0.6 to 2.3 eV in photovoltaic material InN: quantum confinement from surface nanostructure, Journal of Materials Chemistry A 2016, 4, 17412-17418. DOI: 10.1039/c6ta07700e

17. Z. Y. Chen, X. T. Zheng, Z. L. Li, P. Wang, X. Rong, T. Wang, X. L. Yang, F. J. Xu, Z. X. Qin, W. K. Ge, B. Shen, and X. Q. Wang,* Positive temperature coefficient of photovoltaic efficiency in solar cells based on InGaN/GaN MQWs, Applied Physics Letters 2016, 109, 062104. DOI: 10.1063/1.4960765

18. X. Rong, X. Q. Wang,* S. V. Ivanov, X. H. Jiang, G. Chen, P. Wang, W. Y. Wang, C. G. He, T. Wang, T. Schulz, M. Albrecht, V. N. Jmerik, A. A. Toropov, V. V. Ratnikov, V. I. Kozlovsky, V. P. Martovitsky, P. Jin, F. J. Xu, X. L. Yang, Z. X. Qin, W. K. Ge, J. J. Shi, and B. Shen,* High-output-power ultraviolet light source from quasi-2D GaN quantum structure, Advanced Materials 2016, 28, 7978–7983. DOI: 10.1002/adma.201600990

19. X. Rong, X. Q. Wang,* G. Chen, J. H. Pan, P. Wang, H. P. Liu, F. J. Xu, P. H. Tan, B. Shen,* Residual stress in AlN films grown on sapphire substrates by molecular beam epitaxy, Superlattices and Microstructures 2016, 93, 27-31. DOI:10.1016/j.spmi.2016.02.050

20. X. T. Zheng, L. Guo, H. W. Liang, P. Wang, S. B. Wang, T. Wang, X. Rong, B. W. Sheng, X. L. Yang, F. J. Xu, Z. X. Qin, B. Shen, and X. Q. Wang,* Photoconductivity in In_xGa_1-xN epilayers, Optical Materials Express 2016, 6, 815-822. DOI: 10.1364/OME.6.000815

21. P. Wang, Y. Yuan, C. Zhao, X. Q. Wang,* X. T. Zheng, X. Rong, T. Wang, B. W. Sheng, Q. X. Wang, Y. Q. Zhang, L. F. Bian, X. L. Yang, F. J. Xu, Z. X. Qin, X. Z. Li, X. X. Zhang,* and B. Shen,* Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires, Nano Letters 2016, 16, 1328-1334.  DOI:10.1021/acs.nanolett.5b04726

22. L. H. Meng, X. N. Kang,* P. Wang, T. X. Yan, J. Ma, C. M. Lu, N. Y. Liu, Y. Wu, S. Y. Liu, J. S. Wang, X. D. Hu, Polyimide-isolated ridge waveguide InGaN/GaN laser diodes based on back-ward exposure, Superlattices and Microstructures 2016, 91, 313-318. DOI:10.1016/j.spmi.2015.12.031

23. X. Rong, X. Q. Wang,* G. Chen, X. T. Zheng, P. Wang, F. J. Xu, Z. X. Qin, N. Tang, Y. H. Chen, L. W. Sang, M. Sumiya, W. K. Ge, and B. Shen,* Mid-infrared photoconductive response in AlGaN/GaN step quantum wells, Scientific Reports 2015, 5, 14368. DOI: 10.1038/srep14386

24. X. Q. Wang,* P. Wang, S. T. Liu, X. T. Zheng, D. Y. Ma, B. Shen, MBE growth of entire-indium-composition-tunable In_xGa_1-xN alloy (review letter), Scientia Sinica Physica Mechanica & Astronomica 2015, 45, 067301. DOI: 10.1360/SSPMA2015-00114 [王新强*，王平，刘世韬，郑显通，马定宇，沈波，全In组分可调InGaN的分子束外延生长（综述），中国科学，45，067301 (2015)。]

25. G. Chen, X. Q. Wang,* X. Rong, P. Wang, F. J. Xu, N. Tang, Z. X. Qin, Y. H. Chen, and B. Shen,* Intersubband transition in GaN/InGaN multiple quantum wells, Scientific Reports 2015, 5, 11485. DOI: 10.1038/srep11485

26. L. Y. Shi, B. Shen,* J. C. Yan, J. X. Wang, and P. Wang, Localized deep levels in Al_𝑥Ga_1-𝑥N epitaxial films with various Al compositions, Chinese Physics B 2014, 23, 116102. DOI: 10.1088/1674-1056/23/11/116102

27. G. B. Wang, G. Z. Zhao, X. T. Zheng, P. Wang, G. Chen, X. Rong, and X. Q. Wang,* Growth of a-plane InN film and its THz emission, Chinese Physics Letters 2014, 31, 077202. DOI: 10.1088/0256-307X/31/7/077202

Patents