Publications

1. D. Wang, J. Su, Z. Y. Chen, T. Wang, L. Y. Yang, B. W. Sheng, S. J. Lin, X. Rong, P. Wang, X. Y. Shi, W. Tan, J. Zhang, W. K. Ge, B. Shen, Y. N. Liu, and X. Q. Wang,* Repeatable Room Temperature Negative Differential Resistance in AlN/GaN Resonant Tunneling Diodes Grown on Sapphire, Advanced Electronic Materials 2018, 5, 1800651. DOI: 10.1002/aelm.201800651

2. X. T. Zheng, W. Huang, H. W. Liang, P. Wang, Y. Liu, Z. Y. Chen, P. Liang, M. Li, J. Zhang, Y. H. Chen, and X. Q. Wang,* Investigation of InGaN Layer Grown Under In-Rich Condition by Reflectance Difference Spectroscopy Microscope, Journal of Nanoscience and Nanotechnology 2018, 18, 7468–7472. DOI: 10.1166/jnn.2018.16086

3. S. B. Wang, X. Q. Wang,* Z. Y. Chen, P. Wang, Q. Qi, X. T. Zheng, B. W. Sheng, H. P. Liu, T. Wang, X. Rong, M. Li, J. Zhang, X. L. Yang, F. J. Xu, and B. Shen, Enhanced Hydrogen Detection Based on Mg-Doped InN Epilayer, Sensors 2018, 18, 2065. DOI: 10.3390/s18072065

4. Z. Y. Chen, J. Y. Sui, X. Q. Wang,* K. S. Kim, D. Wang, P. Wang, T. Wang, X. Rong, H. Harima, A. Yoshikawa, W. K. Ge, and B. Shen, Transition of dominant lattice sites of Mg in InN:Mg revealed by Raman scattering, Superlattices and Microstructures 2018, 120, 533-539. DOI: 10.1016/j.spmi.2018.06.026

5. T. Wang, X. Q. Wang,* Z. Y. Chen, X. X. Sun, P. Wang, X. T. Zheng, X. Rong, L. Y. Yang, W. W. Guo, D. Wang, J. P. Cheng, X. Lin, P. Li, J. Li, X. He, Q. Zhang, M. Li, J. Zhang, X. L. Yang, F. J. Xu, W. K. Ge, X. X. Zhang,* and B. Shen,* High-Mobility Two-Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy, Advanced Science 2018, 5, 1800844, 1-7. DOI: 10.1002/advs.201800844

6. S. L. Liu, B. W. Sheng, X. Q. Wang,* D. S. Dong, P. Wang, Z. Y. Chen, T. Wang, X. Rong, D. Li, L. Y. Yang, S. F. Liu, M. Li, J. Zhang, W. K. Ge, K. B. Shi, Y. Z. Tong, and B. Shen, Molecular beam epitaxy of single-crystalline aluminum film for low threshold ultraviolet plasmonic nanolasers, Applied Physics Letters 2018, 112, 231904. DOI:10.1063/1.5033941

7. H. P. Liu, X. Q. Wang,* Z. Y. Chen, X. T. Zheng, P. Wang, B. W. Sheng, T. Wang, X. Rong, M. Li, J. Zhang, X. L. Yang, F. J. Xu, W. K. Ge, and B. Shen, High-electron-mobility InN epilayers grown on silicon substrate, Applied Physics Letters 2018, 112, 162102. DOI: 10.1063/1.5017153

8. X. T. Zheng, H. W. Liang,* P. Wang, X. X. Sun, Z. Y. Chen, T. Wang, B. W. Sheng, Y. X. Wang, L. Chen, D. Wang, X. Rong, M. Li, J. Zhang, and X. Q. Wang,* Effect of indium droplets on growth of InGaN film by molecular beam epitaxy, Superlattices and Microstructures 2018, 113, 650-656. DOI: 10.1016/j.spmi.2017.11.053

9. X. X. Sun, X. Q. Wang,* S. T. Liu, P. Wang, D. Wang, X. T. Zheng, L. W. Sang, M. Sumiya, S. Ueda, M. Li, J. Zhang, W. K. Ge, and B. Shen, Determination of the transition point from electron accumulation to depletion at the surface of In_xGa_1-xN films, Applied Physics Express 2018, 11, 021001. DOI: 10.7567/APEX.11.021001

10. X. X. Sun, X. Q. Wang,* P. Wang, T. Wang, B. W. Sheng, X. T. Zheng, M. Li, J. Zhang, X. L. Yang, F. J. Xu, W. k. Ge, and B. Shen, Direct evidence of recombination between electrons in InGaN quantum discs and holes in p-type GaN, Optics Express 2017, 25, 30664. DOI: 10.1364/OE.25.030664

11. T.A. Komissarova,* P. Wang, P. Paturi, X. Wang, S.V. Ivanov, Influence of MBE growth modes and conditions on spontaneous formation of metallic In nanoparticles and electrical properties of InN matrix, Journal of Crystal Growth 2017, 478, 216-219.DOI: 10.1016/j.jcrysgro.2017.09.010 (https://doi.org/10.1016/j.jcrysgro.2017.09.010)

12. X. X. Sun, J. D. Wei, X. Q. Wang,* P. Wang, S. F. Li, A. Waag, M. Li, J. Zhang, W. k. Ge, and B. Shen, Anomalous surface potential behavior observed in InN by photoassisted Kelvin probe force microscopy, Applied Physics Letters 2017, 110, 222103. DOI: 10.1063/1.4984840 (https://doi.org/10.1063/1.4984840)

13. D. Y. Ma, X. Rong, X. T. Zheng, W. Y. Wang, P. Wang, T. Schulz, M. Albrecht, S. Metzner, M. Muller, O. August, F. Bertram, J. Christen, P. Jin, M. Li, J. Zhang, X. L. Yang, F. J. Xu, Z. X. Qin, W. K. Ge, B. Shen, and X. Q. Wang,* Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy, Scientific Reports 2017, 7, 46420. DOI: 10.1038/srep46420

14. P. Wang, X. Q. Wang,* T. Wang, C.-S. Tan, B. W. Sheng, X. X. Sun, M. Li, X. Rong, X. T. Zheng, Z. Y. Chen, X. L. Yang, F. J. Xu, Z. X. Qin, J. Zhang, X. X. Zhang,* and B. Shen,* Lattice-Symmetry-Driven Epitaxy of Hierarchical GaN Nanotripods, Advanced Functional Materials 2017, 27, 1604854. DOI: 10.1002/adfm.201604854

15. X. X. Sun, X. Q. Wang,* P. Wang, B. W. Sheng, M. Li, J. Su, J. Zhang, F. Liu, X. Rong, F. J. Xu, X. L. Yang, Z. X. Qin, W. K. Ge, and B. Shen, Identifying a doping type of semiconductor nanowires by photoassisted kelvin probe force microscopy as exemplified for GaN nanowires, Optical Materials Express 2017, 7, 904-912. DOI:10.1364/OME.7.000904

16. P. Huang, J. J. Shi,* P. Wang, M. Zhang, Y. M. Ding, M. Wu, J. Lu, and X. Q. Wang, Origin of the wide band gap from 0.6 to 2.3 eV in photovoltaic material InN: quantum confinement from surface nanostructure, Journal of Materials Chemistry A 2016, 4, 17412-17418. DOI: 10.1039/c6ta07700e

17. Z. Y. Chen, X. T. Zheng, Z. L. Li, P. Wang, X. Rong, T. Wang, X. L. Yang, F. J. Xu, Z. X. Qin, W. K. Ge, B. Shen, and X. Q. Wang,* Positive temperature coefficient of photovoltaic efficiency in solar cells based on InGaN/GaN MQWs, Applied Physics Letters 2016, 109, 062104. DOI: 10.1063/1.4960765

18. X. Rong, X. Q. Wang,* S. V. Ivanov, X. H. Jiang, G. Chen, P. Wang, W. Y. Wang, C. G. He, T. Wang, T. Schulz, M. Albrecht, V. N. Jmerik, A. A. Toropov, V. V. Ratnikov, V. I. Kozlovsky, V. P. Martovitsky, P. Jin, F. J. Xu, X. L. Yang, Z. X. Qin, W. K. Ge, J. J. Shi, and B. Shen,* High-output-power ultraviolet light source from quasi-2D GaN quantum structure, Advanced Materials 2016, 28, 7978–7983. DOI: 10.1002/adma.201600990

19. X. Rong, X. Q. Wang,* G. Chen, J. H. Pan, P. Wang, H. P. Liu, F. J. Xu, P. H. Tan, B. Shen,* Residual stress in AlN films grown on sapphire substrates by molecular beam epitaxy, Superlattices and Microstructures 2016, 93, 27-31. DOI:10.1016/j.spmi.2016.02.050

20. X. T. Zheng, L. Guo, H. W. Liang, P. Wang, S. B. Wang, T. Wang, X. Rong, B. W. Sheng, X. L. Yang, F. J. Xu, Z. X. Qin, B. Shen, and X. Q. Wang,* Photoconductivity in In_xGa_1-xN epilayers, Optical Materials Express 2016, 6, 815-822. DOI: 10.1364/OME.6.000815

21. P. Wang, Y. Yuan, C. Zhao, X. Q. Wang,* X. T. Zheng, X. Rong, T. Wang, B. W. Sheng, Q. X. Wang, Y. Q. Zhang, L. F. Bian, X. L. Yang, F. J. Xu, Z. X. Qin, X. Z. Li, X. X. Zhang,* and B. Shen,* Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires, Nano Letters 2016, 16, 1328-1334.  DOI:10.1021/acs.nanolett.5b04726

22. L. H. Meng, X. N. Kang,* P. Wang, T. X. Yan, J. Ma, C. M. Lu, N. Y. Liu, Y. Wu, S. Y. Liu, J. S. Wang, X. D. Hu, Polyimide-isolated ridge waveguide InGaN/GaN laser diodes based on back-ward exposure, Superlattices and Microstructures 2016, 91, 313-318. DOI:10.1016/j.spmi.2015.12.031

23. X. Rong, X. Q. Wang,* G. Chen, X. T. Zheng, P. Wang, F. J. Xu, Z. X. Qin, N. Tang, Y. H. Chen, L. W. Sang, M. Sumiya, W. K. Ge, and B. Shen,* Mid-infrared photoconductive response in AlGaN/GaN step quantum wells, Scientific Reports 2015, 5, 14368. DOI: 10.1038/srep14386

24. X. Q. Wang,* P. Wang, S. T. Liu, X. T. Zheng, D. Y. Ma, B. Shen, MBE growth of entire-indium-composition-tunable In_xGa_1-xN alloy (review letter), Scientia Sinica Physica Mechanica & Astronomica 2015, 45, 067301. DOI: 10.1360/SSPMA2015-00114 [王新强*，王平，刘世韬，郑显通，马定宇，沈波，全In组分可调InGaN的分子束外延生长（综述），中国科学，45，067301 (2015)。]

25. G. Chen, X. Q. Wang,* X. Rong, P. Wang, F. J. Xu, N. Tang, Z. X. Qin, Y. H. Chen, and B. Shen,* Intersubband transition in GaN/InGaN multiple quantum wells, Scientific Reports 2015, 5, 11485. DOI: 10.1038/srep11485

26. L. Y. Shi, B. Shen,* J. C. Yan, J. X. Wang, and P. Wang, Localized deep levels in Al_𝑥Ga_1-𝑥N epitaxial films with various Al compositions, Chinese Physics B 2014, 23, 116102. DOI: 10.1088/1674-1056/23/11/116102

27. G. B. Wang, G. Z. Zhao, X. T. Zheng, P. Wang, G. Chen, X. Rong, and X. Q. Wang,* Growth of a-plane InN film and its THz emission, Chinese Physics Letters 2014, 31, 077202. DOI: 10.1088/0256-307X/31/7/077202

Patents