Publications

1. X. Zheng, T. Wang, P. Wang, X. Sun, D. Wang, Z. Chen, P. Quach, Y. Wang, X. Yang, F. Xu, Z. Qin, T. Yu, W. Ge, B. Shen, and X. Wang,* Full-composition-graded InxGa1-xN films grown by molecular beam epitaxy, Applied Physics Letters 2020, 117, 182101. DOI: 10.1063/5.0021811

2. B. Sheng, F. Bertram,* G. Schmidt, P. Veit, M. Muller, P. Wang, X. Sun, Z. Qin, B. Shen, X. Wang,* and J. Christen, Cathodoluminescence nano-characterization of individual GaN/AlN quantum disks embedded in nanowires, Applied Physics Letters 2020, 117, 133106. DOI: 10.1063/5.0024110

3. L. Yang, X. Wang,* T. Wang, J. Wang, W. Zhang, P. Quach, P. Wang, F. Liu, D. Li, L. Chen, S. Liu, J. Wei, X. Yang, F. Xu, N. Tang, W. Tan, J. Zhang, W. Ge, X. Wu, Chi Zhang,* and Bo Shen,* Three Subband Occupation of the Two-Dimensional Electron Gas in Ultrathin Barrier AlN/GaN Heterostructures, Advanced Functional Materials 2020, 30, 2004450. DOI: 10.1002/adfm.202004450

4. X. Sun, P. Wang, T. Wang, L. Chen, Z. Chen, K. Gao, T. Aoki, M. Li, J. Zhang, T. Schulz, M. Albrecht, W. Ge, Y. Arakawa, B. Shen, M. Holmes,* and X. Wang,* Single-photon emission from isolated monolayer islands of InGaN, Light: Science & Applications 2020, 9, 159. DOI: 10.1038/s41377-020-00393-6

5. Y. Wu, D. A. Laleyan, Z. Deng, C. Ahn, A. F. Aiello, A. Pandey, X. Liu, P. Wang, K. Sun, E. Ahmadi, Y. Sun, M. Kira, P. K. Bhattacharya, E. Kioupakis, and Z. Mi,* Controlling Defect Formation of Nanoscale AlN: Toward Efcient Current Conduction of Ultrawide-Bandgap Semiconductors, Advanced Electronic Materials 2020, 6, 2000337. DOI: 10.1002/aelm.202000337

6. X. Sun, P. Wang, Z. Chen, K. Gao, M. Li, J. Zhang, W. Ge, Y. Arakawa, B. Shen, X. Wang,* M. J. Holmes,* Excitation and emission dynamics of a single photon emitting InGaN quantum dot in a photonic horn structure, Superlattices and Microstructures 2020, 145, 106575. DOI: 10.1016/j.spmi.2020.106575

7. B. Sheng, G. Schmidt,* F. Bertram, P. Veit, Y. Wang, T. Wang, X. Rong, Z. Chen, P. Wang, J. Blasing, H. Miyake, H. Li, S. Guo, Z. Qin, A. Strittmatter, B. Shen, J. Christen, and X. Wang,* Photonics Research 2020, 8, 610-615. DOI: 10.1364/PRJ.384508

8. Q. Wen, Y. Wu, P. Wang, D. Laleyan, D. Bayerl, E. Kioupakis, Z. Mi, and M. Kira,* Hyperspectral absorption of semiconductor monolayer crystals, Applied Physics Letters 2020, 116, 181103. DOI: 10.1063/5.0004119

9. P. Wang, A. Pandey, J. Gim, W. J. Shin, E. T. Reid, D. A. Laleyan, Y. Sun, D. Zhang, Z. Liu, Z. Zhong, R. Hovden, and Z. Mi,* Graphene-assisted molecular beam epitaxy of AlN for AlGaN deep-ultraviolet light-emitting diodes, Applied Physics Letters 2020, 116, 171905. DOI: 10.1063/1.5144906

10. P. Wang, D. A. Laleyan, A. Pandey, Y. Sun, and Z. Mi,* Molecular beam epitaxy and characterization of wurtzite Sc_xAl_1−xN, Applied Physics Letters 2020, 116, 151903. DOI: 10.1063/5.0002445 (Editor’s Pick)

11. D. A. Laleyan, N. F. Delgado, E. T. Reid, P.Wang, A. Pandey, G. A. Botton, and Z. Mi,* Strain-free ultrathin AlN epilayers grown directly on sapphire by high-temperature molecular beam epitaxy, Applied Physics Letters 2020, 116, 152102. DOI: 10.1063/1.5144838

12. Y. Wu, X. Liu, P. Wang, D. A. Laleyan, K. Sun, Y. Sun, C. Ahn, M. Kira, E. Kioupakis, and Z. Mi,* Monolayer GaN excitonic deep ultraviolet light emitting diodes, Applied Physics Letters 2020, 116, 013101. DOI: 10.1063/1.5124828 (Featured)

Patents